![J. SALVESTRINI | Adjunct Professor | PhD Physics Université Paul Verlaine - Metz | Georgia Institute of Technology, Georgia | GT | School of Electrical & Computer Engineering | Research profile J. SALVESTRINI | Adjunct Professor | PhD Physics Université Paul Verlaine - Metz | Georgia Institute of Technology, Georgia | GT | School of Electrical & Computer Engineering | Research profile](https://i1.rgstatic.net/ii/profile.image/279319222996992-1443606300203_Q512/J-Salvestrini-2.jpg)
J. SALVESTRINI | Adjunct Professor | PhD Physics Université Paul Verlaine - Metz | Georgia Institute of Technology, Georgia | GT | School of Electrical & Computer Engineering | Research profile
N-Face Semi-Bulk Absorber Boosts Conversion Efficiency of InGaN Solar Cell,Journal of Electronic Materials - X-MOL
![Boosting III-Nitride Solar Cell Efficiency Using a Semibulk Absorber and Piezo-Phototronic Effect | springerprofessional.de Boosting III-Nitride Solar Cell Efficiency Using a Semibulk Absorber and Piezo-Phototronic Effect | springerprofessional.de](https://media.springernature.com/lw150/springer-static/cover/book/978-3-031-14615-2.jpg?as=jpg)
Boosting III-Nitride Solar Cell Efficiency Using a Semibulk Absorber and Piezo-Phototronic Effect | springerprofessional.de
![3 questions à] Jean Paul Salvestrini, directeur exécutif de Georgia Tech Lorraine : découvrez les technologies de micro et nano fabrication pour la micro-électronique | Factuel | le site d'actu de l'Université 3 questions à] Jean Paul Salvestrini, directeur exécutif de Georgia Tech Lorraine : découvrez les technologies de micro et nano fabrication pour la micro-électronique | Factuel | le site d'actu de l'Université](https://factuel.univ-lorraine.fr/sites/factuel.univ-lorraine.fr/files/field/image/2022/05/tp_gtl.png)
3 questions à] Jean Paul Salvestrini, directeur exécutif de Georgia Tech Lorraine : découvrez les technologies de micro et nano fabrication pour la micro-électronique | Factuel | le site d'actu de l'Université
Fabrication de transistors HEMTs AlGaN/GaN de haute fiabilité sur substrat free-standing GaN de haute qualité
![Gravures Anciennes & Dessins | Sculpture Italienne - Vénus et Adonis - Jardin de Boboli - Giardino di Boboli - Florence (Cosimo Salvestrini) | Gravure sur cuivre | 1777 Gravures Anciennes & Dessins | Sculpture Italienne - Vénus et Adonis - Jardin de Boboli - Giardino di Boboli - Florence (Cosimo Salvestrini) | Gravure sur cuivre | 1777](https://static.galerie-napoleon.com/images/artworks/ART-33121/details/05.jpg)
Gravures Anciennes & Dessins | Sculpture Italienne - Vénus et Adonis - Jardin de Boboli - Giardino di Boboli - Florence (Cosimo Salvestrini) | Gravure sur cuivre | 1777
![PDF) Enhancement of the electro-optic properties in hybrid organic–inorganic crystals by molecular engineering | J. Zaccaro - Academia.edu PDF) Enhancement of the electro-optic properties in hybrid organic–inorganic crystals by molecular engineering | J. Zaccaro - Academia.edu](https://0.academia-photos.com/attachment_thumbnails/95811018/mini_magick20221215-1-1152hx4.png?1671141133)
PDF) Enhancement of the electro-optic properties in hybrid organic–inorganic crystals by molecular engineering | J. Zaccaro - Academia.edu
Optical characterization of YCa4O(BO3)3 and Nd:YCa4O(BO3)3 crystals - Ecole Nationale Supérieure de Chimie de Paris
![Gravures Anciennes & Dessins | Sculpture Italienne - Vénus et Adonis - Jardin de Boboli - Giardino di Boboli - Florence (Cosimo Salvestrini) | Gravure sur cuivre | 1777 Gravures Anciennes & Dessins | Sculpture Italienne - Vénus et Adonis - Jardin de Boboli - Giardino di Boboli - Florence (Cosimo Salvestrini) | Gravure sur cuivre | 1777](https://static.galerie-napoleon.com/images/artworks/ART-33121/details/06.jpg)
Gravures Anciennes & Dessins | Sculpture Italienne - Vénus et Adonis - Jardin de Boboli - Giardino di Boboli - Florence (Cosimo Salvestrini) | Gravure sur cuivre | 1777
![Scaling up of Growth, Fabrication, and Device Transfer Process for GaN-based LEDs on H-BN Templates to 6-inch Sapphire Substrates,Advanced Materials Technologies - X-MOL Scaling up of Growth, Fabrication, and Device Transfer Process for GaN-based LEDs on H-BN Templates to 6-inch Sapphire Substrates,Advanced Materials Technologies - X-MOL](https://xpic.x-mol.com/20230929%2F10.1002_admt.202300600.jpg)
Scaling up of Growth, Fabrication, and Device Transfer Process for GaN-based LEDs on H-BN Templates to 6-inch Sapphire Substrates,Advanced Materials Technologies - X-MOL
![J. SALVESTRINI | Adjunct Professor | PhD Physics Université Paul Verlaine - Metz | Georgia Institute of Technology, Georgia | GT | School of Electrical & Computer Engineering | Research profile J. SALVESTRINI | Adjunct Professor | PhD Physics Université Paul Verlaine - Metz | Georgia Institute of Technology, Georgia | GT | School of Electrical & Computer Engineering | Research profile](https://www.researchgate.net/profile/Noureddine-Chaaben-2/publication/361495842/figure/fig1/AS:11431281187454252@1694226229919/SEM-images-of-as-grown-A0-and-samples-annealed-at-different-temperatures-1050-1200-C_Q320.jpg)
J. SALVESTRINI | Adjunct Professor | PhD Physics Université Paul Verlaine - Metz | Georgia Institute of Technology, Georgia | GT | School of Electrical & Computer Engineering | Research profile
![Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) - Ayari - 2019 - Advanced Materials ... Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) - Ayari - 2019 - Advanced Materials ...](https://onlinelibrary.wiley.com/cms/asset/e67f4150-c769-4461-87f3-734904622ad5/admt201970057-gra-0001-m.jpg)